5PCS HMC1190LP6GE H1190 Wideband Radio Receivers 0.7-3.5 GHz

Description

Part No. : HMC1190LP6GE .  H1190
Download :  BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER
w/ Fractional-N PLL & VCO, 0.7 - 3.5 GHz
The HMC1190LP6GE is Ideal for:
• Multiband/Multi-standard Cellular BTS Diversity
Receivers
• GSM & 3G & LTE/WiMAX/4G
• MIMO Infrastructure Receivers
• Wideband Radio Receivers
• Multiband Basestations & Repeaters
Broadband Operation with no external matching
High-side and Low-side LO injection Operation
High Input IP3 of +24 dBm
Power Conversion Gain of 8.9 dB
Input P1dB of 11 dBm
SSB Noise Figure of 9 dB
55 dBc Channel-to-Channel Isolation
Enable/Disable Mixer and PLLVCO independently
Single-ended RF input ports
Maximum Phase Detector Rate: 100 MHz
Low Phase Noise: -110 dBc/Hz in Band Typical
PLL FOM:
-230 dBc/Hz Integer Mode, -227 dBc/Hz Frac
- tional Mode
< 180 fs Integrated RMS Jitter (1 kHz to 20 MHz)
LO Low Noise Floor: -165 dBc/Hz
Mixer Low Noise Floor: -161 dBc/Hz
Integrated VCO
External VCO Input, differential LO output
Exact Frequency Mode:
0 Hz Fractional Frequency Error
Programmable RF Output Phase
Output Phase Synchronous Frequency Changes
Output Phase Synchronization
LO Output Mute Function
Compact Solution, 6x6 mm Leadless QFN Package
The HMC1190LP6GE is a high linearity broadband dual channel downconverting mixer with integrated PLL and VCO
optimized for multi-standard receiver applications that require a compact, low power design. Integrated wideband
limiting LO amplifiers enable the HMC1190LP6GE to achieve an unprecedented RF bandwidth of 700 MHz to 3500
MHz for applications including Cellular/3G, LTE/WiMAX/4G. Unlike conventional narrow-band downconverters, the
HMC1190LP6GE supports both high-side and low-side LO injection over all RF frequencies. The RF and LO input
ports are internally matched to 50 Ohms.
The HMC1190LP6GE features an integrated LO and RF baluns, enable control of IF and LO amplifiers and bias con
-
trol interface to high linearity passive mixer cores. Balanced passive mixer combined with high-linearity IF amplifier
architecture provides excellent LO-to-RF, LO-to-IF, and RF-to-IF isolations. Low noise figure of 9 dB, and high IIP3
of +24 dBm allow the HMC1190LP6GE to be used in most demanding applications. External bias control pins enable
optimization of already low power dissipation of 2.34 W (typical). Fast enable control interface reduces power con
-
sumption further in TDD applications.
External VCO input allows the HMC1190LP6GE to lock external VCOs, and enables cascaded LO architectures
for MIMO applications. Two separate Charge Pump (CP) outputs enable separate loop filters optimized for both
integrated and external VCOs, and seamless switching between integrated or external VCOs during operation. Pro
-
grammable RF output phase features can further phase adjust and synchronize multiple HMC1190LP6GE’s enabling
scalable MIMO and beam-forming radio architectures.
Additional features include configurable LO output mute function, Exact Frequency Mode that enables the
HMC1190LP6GE to generate fractional frequencies with 0 Hz frequency error, and the ability to synchronously
change frequencies without changing phase of the output signal that increases efficiency of digital pre-distortion
loops. The HMC1190LP6GE is housed in RoHS compliant compact 6x6 mm leadless QFN package.
Maker  : HITTITE
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